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Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique,developed by the authors,for operation in the Ka-,V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices.The study shows high values of device efficiency,such as 23%, 22%and 21.5%,for n-Ge/p-Si IMPATTs at the Ka,V and W bands,respectively.The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7×10~6 S/m~2 and 71.3×10~6 S/m~2, which are～3-4 times better than their Si and Ge counterparts at the V-band.The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0×10~9,1.1×10~9 and 1.4×10~9 W/m~2,respectively,for Ka-,V- and W-band operation,which can be observed to be the highest when compared with Si,Ge and n-Si/p-Ge devices.Both of the hetero-junctions,especially the n-Ge/p-Si hetero-junction diode,can thus become a superior RF-power generator over a wide range of frequencies.The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.
Static and dynamic properties of both complementary n-Ge / p-Si and p-Ge / n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, developed by the authors, for operation in the Ka-, V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5% for n- Ge / p-Si IMPATTs at the Ka, V and W bands, respectively. Peak device negative conductances for n-Si / p-Ge and n-Ge / p-Si hetero-junction devices found to be 50.7 × 10 -6 S / m ~ 2 and 71.3 × 10 ~ 6 S / m ~ 2, which are ~ 3-4 times better than their Si and Ge counterparts at the V-band. The calculated values of RF power-density for n-Ge / The p-Si hetero-junction IMPATTs are 1.0 × 10 ~ 9, 1.1 × 10 ~ 9 and 1.4 × 10 ~ 9 W / m ~ 2, respectively, for Ka-, V- and W- band operation, which can be observed to be the highest when compared with Si, Ge and n-Si / p-Ge devices. Both of the hetero-junctions, espe cially the n-Ge / p-Si hetero-junction diode, can therefore become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high- power MM-wave IMPATT for applications in the civil and defense-related arena.