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采用固态磷源分子束外延技术在InP(100)衬底上生长了高质量的InP外延材料.实验结果表明InP/InP外延材料的电学性质与诸多生长参数密切相关.根据霍耳测量结果,对生长条件和实验参数进行了优化,在生长温度为370℃,磷裂解温度为850℃,生长速率为0.791μm/h和束流比为2.5的条件下,获得了厚度为2.35μm的InP/InP外延材料.在77K温度下,电子浓度为1.55×1015cm-3,电子迁移率达到4.57×104cm2/(V.s).
High-quality InP epitaxial materials were grown on InP (100) substrates by solid-state phosphorus source molecular beam epitaxy.The experimental results show that the electrical properties of InP / InP epitaxial materials are closely related to many growth parameters.According to the Hall measurement results, The growth conditions and experimental parameters were optimized. InP / InP epitaxy with a thickness of 2.35μm was obtained at a growth temperature of 370 ℃, a phosphorus pyrolysis temperature of 850 ℃, a growth rate of 0.791μm / h and a beam current ratio of 2.5 At 77 K, the electron concentration was 1.55 × 10 15 cm -3 and the electron mobility reached 4.57 × 104 cm 2 / (Vs).