Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

• 作 者: 毕大炜 张正选 张帅 陈明 余文杰 王茹 田浩 刘张李
• 机 构: The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem a
• 出 处: 中国物理C
• 发表日期: 2009年10期
• 关键词: hardened depleted transistor trapped capture Oxygen hardening insulator drain le

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhard- ened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is pre- sented. At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhard-ened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is pre- radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.