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鉴于扩散电阻的控制在集成电路制造工艺中占有相当重要的地位,因此,本文研究了氧化气氛下影响硼主扩散薄层电阻的各种工艺因素。实验结果表明,影响硼主扩散薄层电阻的重要工艺参数是水温;在宽的温度范围(950～1250℃)内薄层电阻存在着峰值;在适当条件下,主扩散温度、时间以及携带气体的性质、流量是次要的。在实验基础上,通过数学处理,概括出便于计算的硼主扩散薄层电阻的经验表达式。应用这个表达式予期实验结果通常偏差小于10%。通过主扩散薄层电阻的经验表达式与理论表达式之间的比较表明,二者的物理模型极为相似。
In view of diffusion resistance control in IC manufacturing process occupies a very important position, therefore, this paper studies the impact of oxidation of boron main diffusion sheet resistance of various process factors. The experimental results show that the main process parameters influencing the main resistance of boron are the water temperature and the peak value of sheet resistance in a wide range of temperature (950-1250 ℃). Under appropriate conditions, the main diffusion temperature, time, The nature of traffic is secondary. Based on the experiment, the mathematical expression of the empirical formula for calculating the main diffusion resistance of boron is given. The expected results of the application of this expression are usually less than 10% deviation. A comparison between the empirical and theoretical expressions for the main diffusion sheet resistance shows that the physical models of the two are very similar.