The influence of interfacial barrier engineering on the resistance switching of In_2O_3:SnO_2/TiO_2/

• 作 者: 刘紫玉 张培健 孟洋 李栋 孟庆宇 李建奇 赵宏武
• 机 构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of S
• 出 处: Chinese Physics B
• 发表日期: 2012年04期
• 关键词: switching interfacial resistive migration conducting barriers annealing conducti

The I–V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.

The I-V characteristics of In2O3: SnO2 / TiO2 / In2O3: SnO2 junctions with different interfacial barriers are in tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the The nonsynchronous breakdown process of the nonsynchronous breakdown process to the two-step resistive switching process. The unique switching properties of the device , based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.