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本文简要介绍了美、日集成电路发展水平以及硅单晶的质量、直径大型化、等径化的进展情况。并结合国内情况指出了LSI对硅材料的质量要求。硅单晶电阻率的径向不均匀性将决定器件的最小尺寸、金属杂质将导致器件性能恶化、微缺陷、氧含量与LSI质量密切相关。文内对于利用氧沉淀的本征吸杂和作为LSI工艺中的头道工序——硅片加工的质量要求也作了扼要介绍。
This article briefly introduces the development of the integrated circuits in the United States and Japan as well as the progress of the mass, diameter and diameter of silicon single crystals. Combined with the domestic situation pointed out that the quality of silicon LSI material requirements. The radial nonuniformity of silicon single crystal resistivity will determine the minimum size of the device. Metal impurities will lead to deterioration of device performance. Micro defects and oxygen content are closely related to LSI quality. The text also provides a brief introduction to the intrinsic absorption by oxygen deposition and the quality requirements of wafer processing as the first procedure in the LSI process.