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SiO_2/Si界面的一个重要特征是氧空位(或过剩硅离子)和离化施主型界面态这两类主要结构(化学)缺陷所产生的界面正电荷。鉴于金在界面处引入的负电荷对这些固有正电荷的有效补偿,就使得引入金以控制界面净电荷密度成为一个有价值的方法。
An important feature of the SiO 2 / Si interface is the positive interface charge generated by two major structural (chemical) defects, oxygen vacancies (or excess silicon ions) and ionized donor interface states. Given the effective compensation of these intrinsic positive charges by the negative charges introduced at the interface of gold, it has become a valuable method to introduce gold to control the net charge density at the interface.