【摘 要】
：
A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD simulation.Comparisons were carried out
【机 构】
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Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics o
论文部分内容阅读
A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD simulation.Comparisons were carried out between conventional VNWFET and the proposed devices.FD-SOI-HC VNWFET exhibits better/on/loff ratio and DIBL than Bulk-HC VNWFET.The impact of channel doping and geometric parameters on the electrical character-istic and body factor (y) of the devices was investigated.Moreover,threshold voltage modulation by bulk/back-gate bias was im-plemented and a large y is achieved for wide range Vth modulation.In addition,results of Ion enhancement and/off reduction in-dicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management.The results of preliminary experimental data are discussed as well.
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