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对 L C54HC0 4 RH电路在不同辐射剂量率进行了电离辐射实验。分析了该电路的阈值电压随辐射剂量率的变化关系。实验结果表明 :在辐射剂量率处于 3× 10 -4 Gy(Si) / s到 1.98×10 -1Gy(Si) / s范围内 ,辐射感生界面陷阱电荷随辐射剂量率的减少而增加。辐射感生界面陷阱电荷是导致该电路在空间辐射环境下失效的主要原因。
Ionizing radiation experiments were performed on L C54HC0 4 RH circuits at different radiation dose rates. The relationship between the threshold voltage and the radiation dose rate is analyzed. The experimental results show that the trap charge at the radiation-induced interface increases with the dose rate of 3 × 10 -4 Gy (Si) / s to 1.98 × 10 -1 Gy (Si) / s. The radiation-induced interface trapping charge is the main cause of the failure of the circuit in the space radiation environment.