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在绝缘栅双极晶体管(IGBT)模块的高效散热设计、变流器系统的长期可靠性评估等方面,通常需要了解IGBT模块温度,而现有模型及方法仿真耗时严重,难以实现IGBT模块温度的快速求解。针对该问题,文中借鉴直接法的思想,提出了一种新的IGBT模块温度快速求解算法。基于拟合及插值算法,推导并建立了IGBT模块功率损耗模型;基于电热比拟理论,探讨并建立了集中参数的IGBT模块等效Cauer传热网络模型,并将传热微分方程差分化;最终,在同一电路仿真器中构建出IGBT模块温度的快速求解算法。在两电平三相逆变器的算例中,通过与英飞凌IPOSIM的温度计算结果对比,表明文中算法最大误差为3.01%,且温度变化趋势与IPOSIM基本一致;通过与传统基于IGBT器件物理模型、热网络组件模型的计算时间对比,表明文中算法计算速度提高了近1 255倍。
The IGBT module temperature is usually needed to be understood in terms of efficient heat dissipation design of insulated gate bipolar transistor (IGBT) module and long-term reliability evaluation of the converter system. However, the existing model and method simulation are time-consuming and difficult to achieve IGBT module temperature Quick solution. In view of this problem, this article draws lessons from the idea of direct method, put forward a kind of new IGBT module temperature quick solution algorithm. Based on the fitting and interpolation algorithms, the power loss model of IGBT module is deduced and established. Based on the theory of electrothermal comparison, the equivalent Cauer heat transfer network model of IGBT module with concentrated parameters is discussed and the heat transfer differential equation is differentiated. Finally, In the same circuit simulator to build a fast IGBT module temperature solution algorithm. In the case of two-level three-phase inverter, the comparison with the temperature calculation results of Infineon IPOSIM shows that the maximum error of the proposed algorithm is 3.01%, and the temperature trend is basically the same with that of IPOSIM. By comparing with the traditional IGBT based device Physical model and thermal network component model comparison shows that the computational speed of the algorithm has been increased by nearly 1 255 times.