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提出了应用扫描隧道显微镜及利用物质原子结构测量纳米级变形的新方法，对高定向裂解石墨、单晶硅材料的纳米级变形进行了测量研究，得到了强激光辐照石墨的残余应变场，对拨原子后单晶硅形成的纳米裂纹附近区域的残余变形进行了分析
A new method of measuring the nanoscale deformation by means of scanning electron microscopy (SEM) and atom structure of material was proposed. The nanoscale deformation of highly oriented pyrolytic graphite and monocrystalline silicon was measured. The residual strain field of intense laser irradiated graphite was obtained. Residual deformation in the area near the nanocrafts formed by dialing atoms of single crystal silicon was analyzed