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通过磷注入法合成并利用液封直拉法(LEC)生长了富铟InP单晶,将晶锭进行定向切割、研磨和抛光,得到InP抛光片。用金相显微镜、扫描电镜、快速扫描光荧光谱(PL-Mapping)技术、高分辨率XRD射线衍射技术研究了富铟非掺InP单晶样品特性。结果表明,在富铟条件下生长的InP单晶会出现富铟夹杂,这种富铟夹杂可导致其周围位错密度升高,同时富铟夹杂在晶片内分布也是不均匀的,在晶片中心部分富铟夹杂的密度高,在边缘部分密度低。对富铟夹杂形成及不均匀分布的原因进行了分析,讨论了富铟夹杂对PL-Mapping发光峰峰值的影响。
The indium-rich InP single crystal was grown by phosphorus injection method and liquid-filled Czochralski method (LEC). The ingot was cut, polished and polished to obtain InP polishing sheet. The properties of indium-rich non-doped InP single crystal were investigated by metallographic microscope, scanning electron microscopy, rapid scanning PL-Mapping and high-resolution XRD. The results show that indium-rich inclusions occur in InP single crystals grown under indium-rich conditions. Such indium-rich inclusions can lead to an increase in the dislocation density around them, meanwhile the indium-rich inclusions are unevenly distributed in the wafer. Some indium-rich inclusions have high density and low density at the edge. The reasons for the formation and uneven distribution of indium-rich inclusions are analyzed, and the effects of indium-rich inclusions on the luminescence peak-to-peak value of PL-Mapping are discussed.