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采用高温固相法制备近紫外光激发的BaSr_2Si_3O_9∶Eu~(3+)发光材料,研究了Eu3+不同掺杂量对样品晶体结构、发光特性的影响规律。用X射线衍射(XRD)、荧光光谱(PL)、紫外-可见光谱分析系统对样品进行了表征和封装评价。结果表明,随着Eu~(3+)的掺入,BaSr_2Si_3O_9晶体结构并没有发生变化;激发主峰为395nm,发射主峰为611nm,随着Eu~(3+)掺杂量的增加,样品发光强度先升高后降低,在掺杂量为6%(摩尔分数)时发射强度最大;结合396nm近紫外芯片和BAM双峰蓝色荧光材料进行封装测试,所制备白光LED显色指数为88,色温5953K,因此,BaSr_2Si_3O_9∶Eu~(3+)是一种很有应用前景的近紫外激发发光材料。
The BaSr_2Si_3O_9: Eu (3+) luminescent material excited by near ultraviolet light was prepared by solid state reaction at high temperature. The effects of different doping amounts of Eu3 + on the crystal structure and luminescence properties of the samples were studied. The samples were characterized and encapsulated by X-ray diffraction (XRD), fluorescence spectroscopy (PL) and UV-Vis spectroscopy. The results show that the crystal structure of BaSr_2Si_3O_9 does not change with the incorporation of Eu 3+. The main peak of excitation is 395 nm and the main emission peak is 611 nm. With the increase of Eu 3+ doping, the luminescence intensity The first increase and then decrease, the emission intensity is the largest when the doping amount is 6% (mole fraction); the encapsulation test is conducted by combining 396nm near-UV chip and BAM double-blue blue fluorescent material, the prepared white LED has a color rendering index of 88, Therefore, BaSr_2Si_3O_9: Eu ~ (3+) is a very promising near-UV excitation luminescent material.