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We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6 μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447A/cm2 per QD layer is achieved for a QD laser with a cavity length of 2mm.Moreover,the lasing redshifts from 1.61 μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88K is obtained in the temperature range between 10℃ and 40℃.