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许多高压集成电路对表面离子都很敏感,当这些表面离子产生的净电荷在某些器件区域积累到一定数量时,将导致器件击穿电压的下降或漏电流增加。本文提出了一种技术,它通过在标准大气压下放电,有意识地把离子淀积到器件表面上,以此来研究表面离子对器件性能的影响;并且说明了这种技术在评价器件设计、改进加工工艺和失效率分析方面的应用。我们采用这种技术分析了不同的电介质隔离槽深、场板尺寸和场梯度散布对表面离子敏感度的影响,同时给出了在失效率分析方面的三个实例。
Many high-voltage integrated circuits are sensitive to surface ions. When the net charge generated by these surface ions accumulates to a certain extent in some device regions, the breakdown voltage or the leakage current of the device will increase. This paper presents a technique that studies the effect of surface ions on the performance of a device by intentionally discharging ions onto the surface of the device by discharging at standard atmospheric pressure and shows how this technique can be used to evaluate device design, Processing technology and failure rate analysis of the application. We used this technique to analyze the effects of different dielectric trench depths, field plate sizes, and field gradients on the ion sensitivity of the surface, along with three examples of failure rate analyzes.