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采用ICPCVD-SiNx薄膜对GaN/AlGaN基紫外探测器进行钝化,从薄膜绝缘特性、钝化效果两方面,对ICPCVD-SiNx、磁控溅射-SiOx、PECVD-SiOx和PECVD-SiNx四种钝化膜进行对比。制作了钝化膜/GaN MIS器件,通过测试MIS器件漏电流密度和薄膜击穿电场的大小表征薄膜绝缘性能,结果表明ICPCVD-SiNx对应的MIS器件的漏电特性最好,外加偏压为100V时,其漏电流密度保持在1×10-7 A/cm2以下,薄膜击穿电场大于3.3MV/cm。采用不同钝化方法制作了p-i-n型AlGaN基紫外探测器,通过计算钝化前后器件暗电流的变化,表征不同钝化方法的钝化效果。结果表明ICPCVD-SiNx钝化的器件,其暗电流比其他钝化方法的器件小近两个数量级,在-5V偏压下暗电流密度为7.52A/cm2。
The passivation of GaN / AlGaN-based UV detectors with ICPCVD-SiNx thin films was studied. Four kinds of passivation films, ICPCVD-SiNx, magnetron sputtering-SiOx, PECVD-SiOx and PECVD-SiNx The film is compared. The passivation film / GaN MIS device is fabricated. The leakage current density and the breakdown electric field of the MIS device are used to characterize the insulation performance of the thin film. The results show that the leakage current of the MIS device corresponding to ICPCVD-SiNx is the best. When the bias voltage is 100V , The leakage current density is maintained below 1 × 10-7 A / cm2, the breakdown electric field of the film is greater than 3.3MV / cm. P-i-n AlGaN-based UV detectors were fabricated by different passivation methods. The passivation effect of different passivation methods was characterized by calculating the dark current changes before and after passivation. The results show that the ICPCVD-SiNx-passivated device has a dark current of two orders of magnitude less than other passivation devices, with a dark current density of 7.52 A / cm2 at -5V bias.