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使用光学显微镜、原子力显微镜和微区喇曼光谱对在纳球光刻图案化GaAs衬底的孔洞区进行金属有机化学气相沉积(MOCVD)进而对InP成核层进行了研究。实验结果表明,该局域表面InP的成核层生长和孔洞的大小、方向、位置关系不大,与MOCVD的生长条件相关。与渐变缓冲层生长相比,在InP的成核层中没有出现穿透位错,其结晶质量随着温度的升高而提高,但其表面粗糙度会随着温度的升高而增加,这个现象可能和它的3D岛状生长有关。AFM测试结果表明,提高V/III比可以在较低的温度下抑制其表面粗糙度降至纳米量级。微区喇曼光谱测试表明,在适当条件生长下可获得InP成核层的二维生长方式。该研究为进一步基于ART机理在二维图案化GaAs衬底开展InP异质外延研究奠定基础。
The InP nucleation layer was studied by using MOCVD in the hole region of GaAs substrate with nanolithography patterning using atomic force microscopy, atomic force microscopy and Raman microscopy. Experimental results show that the growth of InP nucleation layer is not related to the size, direction and position of holes, and is related to the growth conditions of MOCVD. Compared with the graded buffer layer, there is no threading dislocation in the nucleation layer of InP, and its crystalline quality increases with increasing temperature, but its surface roughness increases with increasing temperature. This The phenomenon may be related to its 3D island growth. AFM test results show that increasing the V / III ratio can suppress its surface roughness to a nanometer level at a lower temperature. Raman spectroscopy in the microdomains shows that the two-dimensional growth mode of the InP nucleation layer can be obtained under appropriate conditions. The research laid the foundation for the further study of InP heteroepitaxy on two-dimensionally patterned GaAs substrates based on the ART mechanism.