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IR 推出 TSOP-6封装 IRF5810双 MOS-FET。IRF5810将两个 P 沟道 HEXFET 功率MOSFET 纳入单一器件,面积仅为1.3mm×2.9mm,使 MOSFET 部件数目减半,节省35%的占位,适用于空间有限的应用。
IR Introduces IRF5810 Dual MOS-FET in TSOP-6 Package. The IRF5810 combines two P-channel HEXFET power MOSFETs into a single device, measuring only 1.3mm x 2.9mm, halving the number of MOSFET components and saving 35% space occupancy for space-constrained applications.