Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

• 作 者: 方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军 赵超 Cor Claeys
• 机 构: IMEC,E.E. Depart. KU Leuven,Key Laboratory of Microelectronic Devices & Integrated Technology,Instit
• 出 处: Journal of Semiconductors
• 发表日期: 2015年09期
• 关键词: drain switched insulator buried symmetric asymmetry normalized capture transisto

This paper studies the amplitude of random telegraph noise(RTN) caused by a single trap in the silicon film of ultra-thin buried oxide(UTBOX) silicon-on-insulator(SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude ΔID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDSdependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDS dependence of the switched source and drain is related to the lateral trap position along the source and drain.

This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude ΔID / ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDSdependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed in asymmetry of the VDS dependence of the switched source and drain is related to the lateral trap position along the source and drain.