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本文由有限厚度溶液及自由表面浓度和恒定表面浓度二种模型出发对ＬＰＥ生长动力学过程进行了理论分析，并导出了实现薄层生长的参数控制条件，根据这一条件用ＬＰＥ技术实际生长了ＧａＩｎＡｓＰ／ＩｎＰ超晶格，５７０℃下用突冷法及被压缩到２００μｍ～５００μｍ的薄层溶液在０．２ｓ的驻留时间内分别重复长出了５ｎｍ（Ｇａ０．４０Ｉｎ０．６０Ａｓ０．８９Ｐ０．１１）和１０ｎｍ（ＩｎＰ）的超晶格，证明了用重复推拉舟的ＬＰＥ系统在一定的参数条件下可以生长ＭＱＷ结构．
In this paper, the growth kinetics of LPE is theoretically analyzed from two models of finite thickness solution, free surface concentration and constant surface concentration, and the parameter control conditions of LPE are deduced. According to this condition, the LPE technique is used to actually grow GaInAsP / InP superlattices were grown at 570 ° C for 5 nm (Ga0.40In0.60As0.89P0.11 ) And 10nm (InP) superlattices. It is proved that the MQW structure can be grown under the condition of certain parameters by the LPE system with repeated push and pull boats.