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选取美国宇航级晶体管2N2219AL同批次的4组(分别为A,B,C和D组)样品进行了寿命试验。A组样品在额定功率P CM为800 mW下进行了6 000 h的工作寿命试验;B,C和D组样品分别在试验应力P为1 200,1 400和1 600 mW下,进行了恒定应力加速寿命试验。对样品电参数直流共发射极电流增益h FE的测试结果表明,h FE呈先增后减的缓慢退化趋势,同时I CBO远小于5 nA的失效标准。试验后,A组样品又在北方实验室环境下贮存了14年,距其制造日期已有32年。对其电参数复测,并与1998年的测试结果对比,没有明显的变化。揭示了高可靠性晶体管在长期工作寿命试验中电参数的变化规律,为其极长的贮存寿命提供了有力的证据。
Select the same batch of American Aerospace class transistor 2N2219AL 4 groups (A, B, C and D respectively) sample life test. Group A samples were subjected to a working life test of 6 000 h at a power rating of 800 mW at a nominal power P CM; samples of groups B, C and D were subjected to constant stress at test stress P of 1 200, 1 400 and 1 600 mW, respectively Accelerated life test. The test results of dc common emitter current gain h FE for the sample electrical parameters show that h FE shows a slow degradation trend first increasing and then decreasing while the I CBO is far less than the failure criterion of 5 nA. After the test, the samples in group A were stored for 14 years in the northern laboratory environment, 32 years from the manufacture date. The electrical parameters of the re-test, and with the 1998 test results, no significant changes. Reveals the variation of the electrical parameters of the high reliability transistor in the long-term working life test, and provides strong evidence for its extremely long storage life.