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以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]为超薄层,制备了结构为indiumtinoxide(ITO)/N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzi-dine(NPB)(45 nm)/(t-bt)2Ir(acac)(d)/NPB(5 nm)/2,2′,2′′(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimid-azole)(TPBI)(30 nm)/Mg:Ag(200 nm)的有机电致发光器件(OLED)。通过改变超薄磷光发光层的厚度,研究了厚度对器件电致发光(EL)性能的影响。结果表明,当磷光染料层厚度为0.20 nm时,器件的最大发光亮度近18400 cd/m2,并在6 V电压下可实现CIE色坐标为(0.33,0.32)的白光发射;当磷光层厚度为0.10 nm时,器件的最大功率效率为5.4lm/W。分析表明,器件的高性能是由于磷光染料的直接载流子捕获可限制复合发光区域,以及NPB向磷光染料的能量传递的共同作用。
A novel iridium complexes yellow light phosphorescent dye bis [2- (4-tertbutylphenyl) benzothiazolato-N, C2 ’] iridium (acetylacetonate) [(t-bt) 2Ir (ITO) / N, N’-bis (naphthalen-1 -yl) -N, N’- bis (phenyl) -benzyl-dine (NPB) (45 nm) / (t-bt) 2Ir ) / NPB (5 nm) / 2,2 ’, 2 "(30-nm) tris- (1 -phenyl-1H- benzimid azole) 200 nm) organic electroluminescent device (OLED). By changing the thickness of the ultrathin phosphorescent layer, the effect of thickness on the electroluminescent (EL) performance of the device was investigated. The results show that when the thickness of the phosphorescent dye layer is 0.20 nm, the maximum luminescence intensity of the device is nearly 18,400 cd / m2 and the white light emission with the CIE color coordinate of (0.33,0.32) can be achieved at the voltage of 6 V. When the thickness of the phosphorescent layer is At 0.10 nm, the maximum power efficiency of the device is 5.4 lm / W. Analysis shows that the high performance of the device is due to the direct charge carrier capture of the phosphorescent dye that limits the recombination of the luminescent regions and the energy transfer from NPB to the phosphorescent dye.