Optical Properties and Microstructure of Ta_2O_5 Thin Films Prepared by Ion Assisted Electron Beam E

• 作 者: 张光勇
• 机 构: School of Materials Science and Engineering, Wuhan University of Technology,
• 出 处: Journal of Wuhan University of Technology(Materials Science
• 发表日期: 2008年05期
• 关键词: maxima transmittance evaporation refractive dielectric Electron parent sputterin

An effective method for determining the refractive index of weak absorption trans-parent thin films was presented, which is also applicable to other weak absorption dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at in-cidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of sub-strate temperature and assisted ion beam.

An effective method for determining the refractive index of weak absorption trans-parent thin films was presented, which is also applicable to other weak absorbing dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ° C. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at in-cidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of sub-strate temperature and assisted ion beam.