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采用脉冲偏压电弧离子沉积技术在玻璃基片上制备了透明的、具有择优取向的MgO薄膜。针对绝缘性薄膜表面的荷电效应,比较了脉冲偏压作用下鞘层对离子的加速时间(即鞘层的寿命)与脉冲宽度的大小以及偏压鞘层的初始厚度与离子穿越的距离的大小,讨论了不同占空比下偏压鞘层对离子的加速效应。利用X射线衍射及扫描电子显微镜对样品的观察结果表明,由于荷电效应,脉冲偏压幅值为-150 V,占空比在10%~40%的范围内,占空比的变化并不能改变MgO薄膜的微观结构和表面形貌。
A transparent, preferred orientation MgO thin film was prepared on a glass substrate by pulse bias arc ion deposition. In view of the charge effect on the surface of insulating film, the acceleration time (ie, the life of the sheath) and the pulse width of the sheath under the pulse bias and the distance between the initial thickness of the bias sheath and the distance Size, the acceleration effect of bias sheath on ions at different duty cycles is discussed. The results of X-ray diffraction and scanning electron microscopy observations of the samples show that due to the charging effect, the pulse bias amplitude is -150 V and the duty cycle is in the range of 10% to 40%, the duty cycle does not change Change the microstructure and surface morphology of MgO films.