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研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。
The effects of different concentrations of Y2O3 doping on the microstructures and electrical properties of ZnO-Bi2O3 thin films prepared by sol-gel method were studied. The results show that the Y2O3-doped ZnO thin films anneal at 750 ° C for 1 h, the characteristic peaks of ZnO thin films match with the hexagonal wurtzite structure of ZnO. The diameter of ZnO grains decreases with the doping amount, Y2O3 rare earth doped zinc oxide grain refinement; film thickness and thickness of each layer is about 80nm. The results also show that the non-linear voltammetry of ZnO thin film is best when the doping concentration of Y3 is 0.2% (mole fraction), the leakage current is 0.46mA, the potential gradient is 110V / mm and the nonlinear coefficient is 3.1.