Fabrication of a 256-bits organic memory by soft x-ray lithography

• 作 者: 刘兴华 鲁闻生 姬濯宇 涂德钰 朱效立 谢常青 刘明
• 机 构: Microfabrication and Nanotechnology Lab,Institute of Microelectronics,Chinese Academy of Sciences,Ke
• 出 处: Chinese Physics B
• 发表日期: 2010年05期
• 关键词: lithography polymethyl methacrylate fabrication fabricate resist wafer Electron

This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure.Electron beam lithography is employed to fabricate the mask for soft x-ray lithography,with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film.Then Au is electroplated on the polyimide film.Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer.The 256-bits organic memory is achieved with the critical dimension of 250 nm.

This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. When Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. 256-bits organic memory is achieved with the critical dimension of 250 nm.