Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

• 作 者: 张宇 王国伟 汤宝 徐应强 徐云 宋国锋
• 机 构: Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,National Lab
• 出 处: 半导体学报
• 发表日期: 2011年10期
• 关键词: strained FWHM doping epitaxy resistivity adjusting Brook quina diagnostics satur

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE).The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~(18) cm~(-3) and the resistivity is 5.295×10~(-3)Ω·cm.

2μm InGaSb / AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy (MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K. The optimal growth temperature of quantum The wells are at 440 ° C. The PL peak wavelength of the quantum wells at 300 K is 1.98 μm, and the FWHM is at 115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is 1.127 × 10-18 cm ~ (-3) and the resistivity is 5.295 × 10 ~ (-3) Ω · cm.