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利用微波等离子体化学气相沉积(MPCVD)技术,采用偏压增加成核(BEN)、两步生长的方法在一氧化碳(CO)和氢气(H2)的环境下制备了金刚石薄膜.利用扫描电子显微镜(SEM)、Raman光谱仪和透射电子显微镜(TEM)对金刚石薄膜的形貌和结构进行了分析.研究发现金刚石晶粒在第一步成核及生长的过程中产生了层错和孪晶,而在第二步的生长过程中产生的层错和孪晶很少,最终形成的金刚石晶粒外表面比较光滑,包含有近五次对称或者平行的片状的孪晶,并可以观察到少量的位错.而在样品的边缘由于等离子体的不均匀产生了比样品中心成核密度低的区域.在这个区域中,发现了一个新的非金刚石的碳结构.
A diamond thin film was prepared by microwave plasma chemical vapor deposition (MPCVD) under the conditions of carbon monoxide (CO) and hydrogen (H2) by using the method of bias-enhanced nucleation (BEN) and growth in two steps.Using scanning electron microscopy SEM, Raman spectroscopy and transmission electron microscopy (TEM) were used to analyze the morphology and structure of the diamond films.It was found that the diamond grains produced layer faults and twins in the first step of nucleation and growth, while in the The second step of the growth process generated by the few layers of faults and twins, the final diamond grain outer surface is relatively smooth, contains nearly five symmetrical or parallel flake twins, and can be observed a small amount of bit However, at the edge of the sample, a region of lower nucleation density than the center of the sample was created due to the non-uniform plasma, and a new non-diamond carbon structure was found in this region.