Nd: Sr_5 (PO_4 )_3 F Crystal Laser Characteristics Using GaAs as Passive Q-switch

• 出 处: Chinese Journal of Lasers
• 发表日期: 2000年02期
• 关键词: switch switched pumped absorber repetition jitter reflectivity pumping attractiv

It is investigated the properties of a diode-pumped Nd: Sr_5 (PO_4)_3 F laser that is passively Q- switched by a thin, single crystal GaAs wafer. The short high-peak-power pulses of the laser have been obtained. The pulse energies, pulse widths and pulse repetition rates for different conditions have been measured and the experimental results show that GaAs is an excellent passive Q- switch of the diode-pumped Nd: Sr_5(PO_4)_3F lasers.

It is investigated the properties of a diode-pumped Nd: Sr_5 (PO_4) _3 F laser that is passively Q-switched by a thin, single crystal GaAs wafer. The short high-peak-power pulses of the laser have been obtained. pulse energies, pulse widths and pulse repetition rates for different conditions have been measured and the experimental results show that GaAs is an excellent passive Q-switch of the diode-pumped Nd: Sr_5 (PO_4) _3F lasers.