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针对内透明集电极(internal transparent collector,ITC)绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)结构的短路特性进行数值模拟研究,通过模拟仿真明确了缓冲层掺杂浓度、局域载流子寿命控制区位置及局域载流子寿命参数对ITC-IGBT的导通特性、开关特性、短路特性的影响。通过优化折中器件的缓冲层掺杂浓度、局域寿命控制区寿命参数和局域寿命控制区位置的关系,在器件特性满足要求的同时,改善器件的抗短路能力。文章最后给出一种可供参考的具有良好抗短路能力的IGBT器件设计方法,确定了缓冲层浓度的最低值和局域载流子寿命最大值,明确了局域寿命控制的合理范围。
The short-circuit characteristics of the internal-transparent collector (ITC) insulated-gate bipolar transistor (IGBT) structure are studied numerically. The doping concentration of the buffer layer, Influence of Life Control Zone Location and Local Carrier Lifetime Parameters on Conduction, Switching, and Shorting Characteristics of ITC-IGBT. By optimizing the buffer layer doping concentration of the compromise device, the relationship between the lifetime parameter of the local lifetime control area and the location of the local lifetime control area, the device’s short-circuit resistance can be improved while the device characteristics meet the requirements. At the end of the article, a reference design method of IGBT device with good short-circuit-proof capability is given. The lowest concentration of buffer layer and the maximum of local carrier lifetime are determined. The reasonable range of local lifetime control is defined.