Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky c

• 作 者: 刘芳 秦志新
• 机 构: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking
• 出 处: Chinese Physics B
• 发表日期: 2016年11期
• 关键词: Schottky AlGaN annealing fluorine capacitance annealed leakage magnitude prior a

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_(0.45)Ga_(0.55)N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N_2 gas at 400 ℃.The reverse leakage current density of Al_(0.45)Ga_(0.55)N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_ (0.45) Ga_ (0.55) N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni / Au Schottky, the samples were thermal annealed in N_2 gas at 400 ℃. The reverse leakage current density of Al_ (0.45) Ga_ (0.55) N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Thermal capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface states energies. capacitance-frequency analysis also demonstrated that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.