Compact silicon-on-insulator-based 2 × 2 Mach–Zehnder interferometer electro-optic switch with low c

• 作 者: 邢界江 李智勇 周培基 巩源浩 俞育德 谭满清 余金中
• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of S
• 出 处: Chinese Optics Letters
• 发表日期: 2015年06期
• 关键词: crosstalk interferometer switch Mach optic switching insulator pull heating dopi

We report a compact 2 × 2 Mach–Zehnder interferometer(MZI) electro-optic switch fabricated on a siliconon-insulator using standard complementary metal-oxide semiconductor(CMOS) processes. With a short modulation arm length of 200 μm, the crosstalk is reduced to-22 d B by the new modulation scheme of push–pull modulation with a pre-biased π∕2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.

We report a compact 2 × 2 Mach-Zehnder interferometer (MZI) electro-optic switch fabricated on a siliconon-insulator using standard complementary metal-oxide semiconductor (CMOS) processes. With a short modulation arm length of 200 μm, the crosstalk is reduced to-22 d B by the new modulation scheme of push-pull modulation with a pre-biased π / 2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.