【摘 要】
：
The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high ele
【机 构】
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Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xi
论文部分内容阅读
The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.
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