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据《信学技报》(日)2009年109(133)期报道,日本东京大学藤岛实等人采用90 nm 1P8M CMOS工艺+1层WCSP(Wafer Level Chip Size Package)工艺开发了毫米波低噪声放大器。63 GHz下的最大微分增益(differential gain)为20
According to “Letters Science and Technology” (2009) 109 (133) period report, Tokyo, Japan Fujishima et al. 90mm 1P8M CMOS process +1 layer WCSP (Wafer Level Chip Size Package) process developed millimeter wave low Noise amplifier. The maximum differential gain at 63 GHz is 20