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可变增益控制是RF接收机的通用功能,它包括程控衰减器和放大器。可编程增益控制单元一般采用CMOS结构的开关器件。采用半导体制造技术制造的CMOS结构开关器件存在非理想特性,其中开关切换过程残留电荷是一种非理想特性。如果CMOS开关器件位于信号通路,开关切换残留电荷会传导到下一级电路,从而影响系统的瞬态性能,干扰RF接收机对获取信号的判断。通过在技术上的设计来减小开关过冲是CMOS结构开关器件的设计难点之一。针对这一特性,进行了理论分析并提出了解决方案。通过对几种解决方案的对比,给出了各自的特点。最后通过差分抑制过冲的实测结果分析,表明此方法具备较优效果。
Variable gain control is a versatile function of the RF receiver and includes programmable attenuators and amplifiers. Programmable gain control unit commonly used CMOS structure of the switching device. CMOS structure switching devices manufactured using semiconductor manufacturing technology have non-ideal characteristics, in which the residual charge in the switching process is a non-ideal characteristic. If the CMOS switch device is located in the signal path, the residual charge of the switch will be transferred to the next level circuit, which will affect the transient performance of the system and interfere with the judgment of the RF receiver on obtaining the signal. Reducing the switching overshoot by technical design is one of the design difficulties of the CMOS structure switching device. In response to this characteristic, a theoretical analysis and proposed solutions. Through the comparison of several solutions, given their own characteristics. Finally, differential suppression of overshoot by the measured results show that this method has excellent results.