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为了改善金属氧化物半导体场效应管(MOSFET)的短沟道效应(SCE)、漏致势垒降低(DIBL)效应,提高电流的驱动能力,提出了单Halo全耗尽应变硅绝缘体(SOI)MOSFET结构,该结构结合了应变Si,峰值掺杂Halo结构,SOI三者的优点.通过求解二维泊松方程,建立了全耗尽器件表面势和阈值电压的解析模型.模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响,不同漏电压对表面势的影响,Halo掺杂对阈值电压和DIBL的影响.结果表明,该新结构能够抑制SCE和DIBL效应,提高载流子的输运效率.
In order to improve the short-channel effect (SCE), leakage-induced potential reduction (DIBL) effect and improve the current driving capability of a MOSFET, a single Halo fully depleted strained silicon insulator (SOI) MOSFET structure which combines the advantages of strained Si, peak-doped Halo structure and SOI.The analytic model of the fully depleted device surface potential and threshold voltage is established by solving the two-dimensional Poisson equation.The relaxation of the relaxation The effect of Ge component on the surface potential, surface field strength and threshold voltage, the effect of different drain voltages on the surface potential and the doping of Halo on the threshold voltage and DIBL were studied.The results show that the new structure can inhibit the SCE and DIBL effect, improve carrier transport efficiency.