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用于毫米波平衡混频器的单片集成电路已在半绝缘砷化镓衬底上研制成功。在交叉混频器中,砷化镓基片作为一根悬浮的带线。在30到32GHz整个频率范围上,应用一个单片砷化镓平衡混频滤波器片就可获得4.5dB的双边带噪声系数。单片砷化镓平衡混频器已最优化,并且以平面组件的形式与混合式微波集成前置放大器相接,因而大大改善了射频带宽并减小了尺寸。在从31到39GHz频率范围内,应用仅为0.5×0.43平方英寸的一块砷化镓片,就可获得低于6dB的双边带噪声系数。这个噪声系数包括了前置中频放大器(5～500MHz)的1.5dB噪声系数。
Monolithic integrated circuits for millimeter-wave balanced mixers have been developed on semi-insulating gallium arsenide substrates. In a crossover mixer, a gallium arsenide substrate acts as a suspended ribbon. A single-chip, gallium arsenide balanced mixer filter delivers a 4.5dB double-sideband noise figure over the entire frequency range from 30 to 32GHz. Monolithic gallium arsenide balanced mixer has been optimized, and in the form of planar components with hybrid microwave integrated preamplifier phase, thus greatly improving the RF bandwidth and reduce the size. A single gallium arsenide chip measuring only 0.5 × 0.43 square inches from 31 to 39 GHz yields a double sideband noise figure of less than 6 dB. This noise figure includes the 1.5dB noise figure of the preamplifier (5 ~ 500MHz).