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这篇文章讨论了一种正在发展中的新型场效应晶体管,它是从另一种场效应管——Tecnetron 发展过来的。它利用了向心收缩原理,并具有多道沟结构。由于这一发展有可能把双极晶体管和场效应管的优点综合起来。在文章的理论部分讨论了向心收缩的特性。因为隐栅场效应晶体管是多沟道结构,它克服了自由度的限制。消除了向心收缩的缺点,而保留了它的优点。对于隐栅场效应晶体管的各种几何形状和实现这种器件的工艺已进行了讨论,特别注意到它们适合于集成电路。简单地给出了所获得的结果,简述了对于未来的展望。
This article discusses a new type of field-effect transistor that is evolving from Tecnetron, another type of field-effect transistor. It utilizes the principle of centripetal contractions and has a multi-channel structure. As a result of this development it is possible to combine the advantages of bipolar transistors and field effect transistors. In the theoretical part of the article, we discuss the contractions of centripetality. Since the buried gate field effect transistor is a multi-channel structure, it overcomes the limitation of the degree of freedom. Eliminates the disadvantage of shrinking to the center, while retaining its advantages. Various geometries of the buried gate field effect transistors and processes for implementing such devices have been discussed, with particular attention being drawn to their suitability for use in integrated circuits. The results obtained are simply given outlining the outlook for the future.