高灵敏度InAs/AlSb量子阱的霍尔器件(英文)

• 作 者: 武利翻 苗瑞霞 李永峰 杨小峰
• 机 构: 西安邮电大学电子工程学院,
• 出 处: 发光学报
• 发表日期: 2004年期
• 关键词: 霍尔器件 InAs/AlSb 量子阱结构 电子迁移率 电子浓度 输出电阻 分子束外延 输入电阻 敏感度 衬底

用分子束外延在Ga As(001)衬底上生长了两个量子阱结构的霍尔器件,一个是没有掺杂的量子阱结构,一个是Si-δ掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明,在300 K下,Si-δ掺杂的量子阱结构的电子迁移率高达25 000 cm~2·V~(-1)·s~(-1),并且该器件输入电阻和输出电阻较低。同时,Si-δ掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。

Two quantum well structure Hall devices were grown on Ga As (001) substrate by molecular beam epitaxy, one of which is undoped quantum well structure and the other is Si-δ doped quantum well structure. The relationship between the surface electron concentration and electron mobility of Hall devices and temperature is studied. The results show that the electron mobility of Si-δ-doped quantum well structure reaches as high as 25 000 cm -2 · V -1 · s -1 at 300 K, and the input resistance and output resistance Lower. Meanwhile, the sensitivity of the Si-δ-doped quantum well structure Hall device is better than that of the un-doped quantum well structure Hall device.