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SiC材料具有宽禁带、高电子饱和漂移速度、高击穿电压、高热导率和相对低的介电常数等优点,使SiC MESFET在微波功率等方面的应用得到了快速发展。采用国产SiC外延片,解决了欧姆接触、干法刻蚀及损伤修复等一系列工艺难题;针对不同应用背景,研制出总栅宽分别为1、5、15、20mm系列SiC MESFET样管。在2GHz脉冲状态下,300μs脉宽、10%占空比、20mm栅宽器件单胞输出功率超过80W,功率密度大于4W/mm;15mm栅宽器件在3.1~3.4GHz频带脉冲功率输出超过30W。该研究结果为SiC器件的实用化奠定了基础。
The advantages of SiC materials such as wide band gap, high electron saturation drift velocity, high breakdown voltage, high thermal conductivity and relatively low dielectric constant have led to the rapid development of SiC MESFETs in microwave power and other fields. The domestic SiC epitaxial wafers are used to solve a series of technological problems such as ohmic contact, dry etching and damage repairing. A series of SiC MESFET sample tubes with total gate widths of 1, 5, 15 and 20 mm respectively are developed for different application background. The pulse power of 300μs pulse width and 10% duty cycle, 20mm gate-width device unit output power exceeds 80W and the power density is greater than 4W / mm at 2GHz pulse. The pulse power output of 15mm gate-width device in the frequency band of 3.1 ~ 3.4GHz exceeds 30W. The results of this study laid the foundation for the practical application of SiC devices.