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用慢正电子探针分别检测了Ｐ＋注入和Ｐ注入Ｓｉ（１００）的两组样品。与基底样品相比较，注入样品中的缺陷导致了正电子湮没参数的显著变化。由湮没线形参数的变化拟合了两组样品注入损伤的深度分布、缺陷对正电子的捕获系数，讨论了Ｐ＋和Ｐ注入损伤缺陷的差别和它们在退火过程中的不同行为。
Two sets of samples of P + implant and P implant Si (100) were examined with slow positron-probe. Defects in the injected sample resulted in significant changes in positron annihilation parameters as compared to the substrate samples. The depth distribution of implanted damage and the capture coefficient of defect to positron were fitted by the changes of annihilation linear parameters. The differences of P + and P implanted defects and their different behavior in annealing process were discussed.