Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

• 作 者: 柯青 谭少阳 陆丹 张瑞康 王圩 吉晨
• 机 构: Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences,
• 出 处: Chinese Physics Letters
• 发表日期: 2015年06期
• 关键词: waveguide trench confinement Fabry refractive switch separate lasing cladding pr

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported.Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated.The influence of an effective lateral refractive index step on the maximum output power is investigated.A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser.

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP / InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser.