论文部分内容阅读
本文根据半导体材料的实际性能参数,并考虑到光电压V和耗尽区宽度W的变化对光电流π的影响,较严格地计算了GaP/CuInS_2和Cds/CuInSe_2两种异质结单晶薄膜太阳电池的光伏特性,并在J_■Ⅰ=J_■Ⅱ的条件下,对由上述两种异质结构成的二重结太阳电池的厚度进行匹配组合,然后计算了各种组合下的二重结太阳电池的光伏特性。
According to the actual performance parameters of semiconductor materials and taking into account the influence of the change of photo voltage V and the width W of the depletion region on the photocurrent π, the two heterojunction single crystal films GaP / CuInS_2 and Cds / CuInSe_2 Solar cell photovoltaic characteristics, and J_ ■ Ⅰ = J_ ■ Ⅱ under the conditions of the two heterojunction formed by the structure of the dual junction solar cell thickness matching, and then calculated under various combinations of double Photovoltaic characteristics of junction solar cells.