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用双靶磁控溅射的方法在玻璃衬底上制备了Cu1 1 In9合金薄膜 ,然后将Cu1 1 In9合金薄膜封闭在石墨盒中进行真空硒化退火得到CuInSe2 薄膜 .用扫描电子显微镜 (SEM)和X射线粉末衍射 (XRD)对CuInSe2 薄膜进行了表征 ,结果表明CuInSe2 薄膜具有单一的晶相 ,均匀、致密的结构 ,以及粒径超过了 3μm的晶粒 .
Cu1 1 In9 alloy thin films were prepared on glass substrates by double-target magnetron sputtering and CuInSe2 films were obtained by vacuum selenide annealing in a graphite box with Cu1 1 In9 alloy films closed.Using scanning electron microscopy (SEM) And X-ray powder diffraction (XRD) were used to characterize the CuInSe2 thin films. The results show that the CuInSe2 thin films have single crystal phase, uniform and compact structure, and the grain size is over 3μm.