Correlation between the structural, morphological, optical, and electrical properties of In_2O_3 thi

• 作 者: A.Bouhdjer A.Attaf H.Saidi H.Bendjedidi Y.Benkhetta I.Bouhaf
• 机 构: Laboratory of Semiconductors Materials,University of Med Kheider,
• 出 处: Journal of Semiconductors
• 发表日期: 2015年08期
• 关键词: spray preferred transmittance morphological optical crystalline Correlation vari

Indium oxide(In_2O_3) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution;the physical properties of these films are characterized by XRD,SEM,and UV-visible.XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the(222) plane when the deposition time changes from 4 to 10 min,but when the deposition time equals13 min we found that the majority of grains preferred the(400) plane.The surface morphology of the In_2O_3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation.The transmittance improvement of In_2O_3 films was closely related to the good crystalline quality of the films.The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min.The film thickness was varied between 395 and 725 nm.The film grown at 13 min is found to exhibit low resistivity(10~(-2) Ω·cm),and relatively high transmittance(~93%).

Indium oxide (In_2O_3) thin films are successfully deposited on glass substrates at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the (222) plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the (400) plane. The surface morphology of the In_2O_3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The transmittance improvement of In_2O_3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing deposition time from 4 to 13 min.The film th ickness was varied between 395 and 725 nm. The film grown at 13 min was found to exhibit low resistivity (10 ~ (-2) Ω · cm), and relatively high transmittance (~ 93%).