论文部分内容阅读
Device quality InAsP/InGaAsP strained multiquantum-well (MQW) structures are successfully grown by using gas source molecular beam epitaxy method. The grown MQW and InGaAsP quanteary alloy are characterized by using x-ray diffraction, room temperature photoluminescence measurements, confirming that optimum growth condition and high quality material have been obtained for device application. The grown laser structures are processed into ridge waveguide lasers. A threshold current as low as 16mA at 250C for 300μm long device has been obtained. Temperature-dependent light-current measurement shows a characteristic temperature of75K.