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东芝美国公司推出一种多芯片封装(MCP)NAND闪存解决方案,这种1.8V MCP解决方案可在一个芯片级封装(CSP)内支持NAND闪存、SRAM以及SDRAM器件的组合。新MCP采用2～6个裸片堆叠结构,以满足用户对设计空间和系统的要求。新MCP还采用0.13μm工艺和多层控制单元(MLC)技术,所以产品可配置成256M/512MNAND闪存。最近,东芝与San Disk联合推出采用90nm工艺的MLC NAND闪存,其中包括世界第一块4G单晶MLC NAND芯片。东芝还推出8G NAND闪存,它在单一封装内堆叠2个4G NAND闪存。这种MCP NAND主要用于2.5G/3G高端手机。
Toshiba America, Inc. introduced a multi-chip package (MCP) NAND flash solution that supports a combination of NAND flash, SRAM, and SDRAM devices in a single chip scale package (CSP). The new MCP uses 2 to 6 die stack structure to meet the user’s design space and system requirements. The new MCP also uses 0.13μm process and multi-level control unit (MLC) technology, so the product can be configured as 256M / 512MNAND flash memory. Recently, Toshiba and San Disk jointly launched MLC NAND flash memory using 90nm technology, including the world’s first 4G single-crystal MLC NAND chip. Toshiba also introduced 8G NAND flash memory, which stacks 2 4G NAND flash memories in a single package. This MCP NAND is mainly used for 2.5G / 3G high-end mobile phones.