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东芝公司旗下存储与电子元器件解决方案公司近日宣布面向高效电源推出具备改进的低导通电阻、高速开关的800V超级结N沟道功率MOSFET。“DTMOS IV系列”的八款新MOSFET利用超结结构,与东芝之前的“π-MOSVⅢ系列”相比,其可将其单位面积导通电阻(RON x A)降低近79%。该系列
Toshiba Corp.’s storage and electronic components solutions company announced the 800V super-junction N-channel power MOSFET with improved low on-resistance and high-speed switching for high efficiency power supplies. Eight new MOSFETs in the “DTMOS IV Series” utilize super-junction structures that reduce their RON x A by nearly 79% compared to the previous “π-MOSVⅢ Series” . The series