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介绍了硅深槽刻蚀的基本原理和影响对蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深糟刻蚀工艺条件。
The basic principle of silicon deep groove etching and several main process factors affecting the etching effect are introduced. A 1μm-wide silicon deep trench etching process is proposed. The process conditions of 1μm wide, 8μm deep, side-wall and bottom smooth deep silicon etching are given.