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Novel models (2×1) of Si(001)-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation (GGA) is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function(ELF).